http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000073768-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F24H2250-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61H39-06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F24H9-1863 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F24H9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F24H7-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F24H9-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F24H3-0405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B14-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 1999-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b89e7e4d81360f20a47c2c7534afb1a3 |
| publicationDate | 2000-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000073768-A |
| titleOfInvention | Method for slicing a silicon ingot with a laser beam |
| abstract | The present invention relates to a method for silicon ingot laser beam slicing in a semiconductor wafer fabrication process.n n n That is, the present invention provides a method for cutting a silicon ingot laser beam in a semiconductor wafer manufacturing process, comprising: growing a silicon ingot; Cutting the grown silicon ingot with a laser cutting means to form a silicon wafer; Processing the edges of the formed silicon wafer into a predetermined shape using laser cutting means; Performing a heat treatment process to remove donors generated during the silicon ingot growth step; Performing an external gettering process to remove impurities remaining in the silicon wafer; Performing a cleaning / drying process for removing fine particles and the like remaining on the silicon wafer; Checking for contamination, flatness and warping of the silicon wafer; Packaging the silicon wafer. Therefore, the present invention can innovatively improve the flatness and surface roughness problem of the wafer in the conventional silicon ingot cutting technology, and can reduce the cost because it is a semi-permanent method that replaces the consumable water-soluble slurry. It is possible to reduce the process cycle time by eliminating ancillary processing steps such as the polishing process after the outer gettering. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013161820-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109382921-A |
| priorityDate | 1999-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.