http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000073360-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1999-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ec68e0915d8c111e5cf13d91f37bfa9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d44f6ac2ade4ee0cdc067bd4195e74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79d76beae5405474a21b3da1d7f3cca7 |
| publicationDate | 2000-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000073360-A |
| titleOfInvention | Manufacturing method of barrier layer for semiconductor device |
| abstract | A method of manufacturing a barrier layer of a semiconductor device is disclosed. An aspect of the present invention forms an insulating layer having a contact hole exposing on a semiconductor substrate. A titanium layer in contact with the semiconductor substrate exposed on the insulating layer is formed by chemical vapor deposition to form a titanium silicide layer at an interface with the semiconductor substrate in contact with the titanium layer. The titanium layer is etched entirely to selectively reduce the thickness of the portion covering the insulating layer of the titanium layer. The etched titanium layer is nitrided. A titanium nitride layer is formed on the nitrided titanium layer. |
| priorityDate | 1999-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.