patent/KR-20000035730-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000035730-A

Outgoing Links

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classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-60
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
filingDate	1999-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a613c06f34e070ba59c82ae86371f83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51c7d49dbe7d0e146a58a583da20171d
publicationDate	2000-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	KR-20000035730-A
titleOfInvention	Semiconductor device
abstract	A wiring or an active element 3 is formed on the semiconductor substrate 1, and an electrode pad 5 is formed on the wiring or the active element 3 through the interlayer insulating film 3. Protrusion electrodes are formed on the surface of the electrode pad 5 to protect the wiring or the active element 3 during bonding to external terminals.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380612-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180067449-A
priorityDate	1998-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24586 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24404 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450542361 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454511054 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559532 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23675242

Total number of triples: 51.