http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000027678-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1998-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_972a340578e3c3568d15d492db9af0c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_890d4aca3cc20b9b5d8f7c008b5c2d07 |
| publicationDate | 2000-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000027678-A |
| titleOfInvention | Polyside Formation Method Using Plasma Treatment |
| abstract | The present invention relates to a polyside forming method using a plasma treatment, which can prevent a residue from forming during the polyside gate formation due to the protrusions formed on the polysilicon film, and to form the silicide after forming the polysilicon film. It is characteristic that the silicide is formed after smoothly treating the surface of the polysilicon film by removing the milly-shaped protrusions, which cause residues when forming polyside gates, with a plasma containing inert gas as a main component. |
| priorityDate | 1998-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.