abstract |
The present invention has a resistivity of at least 1 × 10 −4 Ωcm or more and less than 1 × 10 3 Ωcm on a surface used for crimping on the base, a surface opposite to this surface, or two or more surfaces intersecting these surfaces. A conductive polycrystalline diamond film having a film thickness in the range of 0.1 m to 500 m is formed by vapor phase synthesis. |