Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
filingDate |
1999-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f22edab98a3e566061d65f614adc7bdb |
publicationDate |
2000-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20000011563-A |
titleOfInvention |
Process for patterning conductive line without after-corrosion and apparatus used in the process |
abstract |
The aluminum-copper alloy layer 13 is patterned through photolithography after the dry etching, and the etching residue containing aluminum chloride which generates after-corrosion in the aluminum-copper alloy wire 13a / 13b / 13c during the dry etching. As the sidewalls 15 grow, the sidewalls 15 are exposed to a gaseous mixture comprising ion water vapor such that the hydrogen ions and / or hydroxyl groups react with the aluminum chloride, thereby bringing the aluminum chloride into aluminum and / or aluminum hydroxide and vacuum. Is converted to hydrochloric acid which is vaporized. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180028242-A |
priorityDate |
1998-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |