http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000006202-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2111-90 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B38-0058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-53 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B38-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-53 |
| filingDate | 1999-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb223d37c19c04216902f61f88f397f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57cd73dd9d0463930705bc19bb2e7983 |
| publicationDate | 2000-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000006202-A |
| titleOfInvention | A highly resistive recrystallized silicon carbide, an anti-corrosive member, a method for producing the highly resistive recrystallized silicon carbide, and a method for producing the anti-corrosive member |
| abstract | The present invention provides a recrystallized silicon carbide having a high volume resistivity, and also provides a method for producing a high resistance recrystallized silicon carbide.n n n Recrystallized silicon carbide having open pores, wherein the carbon layer on the inner wall surface of the open pores is removed by etching, so that the resistivity at room temperature is 10,000 Pa · cm or more. The inner wall surface of the open pores is etched by performing heat treatment in a state in which a material made of recrystallized silicon carbide having open pores is immersed in an acid solution. Preferably, the acid solution contains at least hydrofluoric acid, more preferably, hydrofluoric acid and nitric acid, and the temperature of the heat treatment is at least 100 ° C. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102254543-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180130164-A |
| priorityDate | 1998-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.