http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S60176913-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K5-16
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filingDate 1984-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55b207bd2199414a2b73ded05a9d6c73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6db81da6bfa37d80441b4073fb45da72
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publicationDate 1985-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S60176913-A
titleOfInvention Insulating silicon carbide powder and its production
abstract PURPOSE: To produce silicon carbide powder having excellent electrical insulation and thermal conductivity, by heating silicon carbide powder in nitrogen gas atmosphere in the presence of carbon and a boric acid compound, thereby depositing a boron nitride layer to the surface of the silicon carbide powder. n CONSTITUTION: The powder of silicon carbide is heat-treated at about 1,650W 2,300°C in nitrogen gas atmosphere in the presence of carbon and a boric acid compound to deposit a boron nitride layer having a specific thickness to the surface of the silicon carbide powder. The crystal form of the silicon carbide may be α or β, however, the purity of the silicon carbide is preferably about ≥90%. The carbon is e.g. acetylene black, channel black, etc., and the boric acid compound is e.g. boric acid, methyl borate, etc. If necessary, the attached impurities, etc. are removed by washing the treated silicon carbide powder with a hydrochloric acid solution, and the product is dried to obtain the objective silicon carbide powder. n COPYRIGHT: (C)1985,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4701427-A
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priorityDate 1984-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.