http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990072607-A

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
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filingDate 1999-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1999-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-19990072607-A
titleOfInvention Method of manufacturing semiconductor device
abstract In the method of manufacturing a semiconductor device, in a first step, a lower layer wiring is formed on a semiconductor substrate via a first interlayer insulating film. In a second step, a second interlayer insulating film is formed on the semiconductor substrate including the lower wiring. In the third step, through holes are formed in the second interlayer insulating film so as to reach the lower layer wirings. In the fourth step, after completion of the third step, the surface of the lower wiring including the side surface exposed to the bottom of the through hole is etched without exposing the semiconductor substrate to the atmosphere. In a fifth step, a plug made of a conductive material is formed in the through hole. In the sixth step, upper wiring to be connected to the plug is formed on the second interlayer insulating film.
priorityDate 1998-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
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Total number of triples: 20.