http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990065188-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1998-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990065188-A |
| titleOfInvention | Multilayer Dry Etching Method of Semiconductor Devices |
| abstract | The present invention relates to a multi-layer dry etching method of a semiconductor device, in which a silicon oxide film / polysilicon layer / metal layer or metal silicide layer / mask pattern is sequentially laminated on a semiconductor substrate and is anisotropically etched without residue along the mask pattern. That's how.n n n The etching process includes a first gas including at least two gases of O 2 , N 2 , and CO as an etching gas, a second gas containing fluorine, a third gas containing chlorine, and a fourth gas containing bromine A first step of etching the metal layer or the metal silicide layer using a mixed plasma of fluoride, a second step of treating the entire structure on the semiconductor substrate using fluorine gas containing carbon as an etching gas, and chlorine as an etching gas. It provides a multi-layer film dry etching method of the semiconductor device comprising the step of sequentially etching the polysilicon layer using a gas containing. |
| priorityDate | 1998-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.