http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990065186-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 1998-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990065186-A |
| titleOfInvention | Multilayer Dry Etching Method |
| abstract | The present invention relates to a dry etching method of a multilayer film for wiring formation of a semiconductor device, and more particularly, to a method of etching a multilayer film of titanium silicide / polysilicon.n n n An object of the present invention is to provide an multilayer anisotropic etching method of an upper layer of titanium silicide using Cl 2 / N 2 gas and an etching of lower layer polysilicon using Cl 2 / O 2 . This has the effect of improving the reliability of the semiconductor device. |
| priorityDate | 1998-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.