| abstract |
The present invention discloses a method for forming a conductive layer using an atomic layer deposition process. The present invention forms a sacrificial metal atom layer on a semiconductor substrate by reacting a metal-containing precursor and a reducing gas, and uses a metal halide gas that reacts well with the sacrificial metal atom layer to form a metal on the semiconductor substrate. And a metal atom layer in which metal atoms decomposed from the halogen compound gas are deposited. In addition, in the present invention, by further forming a silicon atom layer using a silicon source gas on the metal atom layer, the metal atom layer and the silicon layer are alternately stacked. As a result, the present invention can form a metal layer or a metal silicide layer excellent in step coating properties on a semiconductor substrate. |