| abstract |
A method and structure for uniformly lining a dual damascene structure in an integrated circuit are provided. Trench 60 and contact paths 62 are formed in insulating layers 60 and 56. The trench 60 and the passage 62 are exposed to alternating chemicals to form a single layer of constant lining material 150. Typical process flows include alternating pulsed metal halides 104 and ammonia gas 108 injected into a constant transport stream. Therefore, the nitrogen and the self-terminated metal layer react. Nearly complete step coverage allows a minimum thickness for diffusion barrier operation, thereby maximizing the volume of the next fill metal 160 for certain trench and passage dimensions. |