| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate |
1998-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1999-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-19990030184-A |
| titleOfInvention |
Silicon Integrated Circuit Manufacturing Method |
| abstract |
The present invention deposits a first TiN layer by chemical vapor deposition (CVD) to obtain good step coverage, and then PVD (physical to obtain a uniform surface texture for deposition of an aluminum alloy contact layer). A composite TiN barrier layer structure formed by depositing a second TiN layer formed by vapor deposition. Optionally, a uniform TiN layer structure is obtained by depositing multiple CVD TiN layers as a series of thin strata, followed by passivating after each deposition step to fully crystallize each layer, As a result, a uniformly crystallized barrier layer is obtained. |
| priorityDate |
1997-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |