http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990030132-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1998-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990030132-A |
| titleOfInvention | Method for Etching Silicon Dioxide-containing Layer |
| abstract | The present invention is directed to a method of improving the selectivity of oxide-to-nitride during etching a BPSG-containing layer to form self-aligned contacts on a semiconductor substrate. The BPSG-containing layer is deposited on top of the silicon nitride layer and inside vias formed through the silicon nitride layer. Such methods include placing a substrate inside the plasma processing chamber and introducing an etchant source gas into the plasma processing chamber. The etchant source gas includes additive gases other than C 4 F 8 and CO. The additive gas consists of molecules in which the ratio of oxygen atoms to carbon atoms is 1: 1. The method further includes exciting the etchant source gas with a communication wave (RF) power having a frequency of 13.56 MHz to etch at least a portion through the BPSG-containing layer to produce a plasma from the etchant source gas. . |
| priorityDate | 1997-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.