http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990004560-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1997-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990004560-A |
| titleOfInvention | Device Separation Method of Semiconductor Device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for fabricating a device isolation film of a semiconductor device, wherein a thinning phenomenon in a corner portion of a trench is formed by forming an O 3 -TEOS-oxide film higher than an active region as an insulating layer in a field region below a semiconductor substrate where a trench is formed. The present invention relates to a technology for improving electrical characteristics of devices by preventing the damage.n n n According to the present invention, a nitride pattern and a pad oxide pattern are formed on the semiconductor substrate, and a trench is formed on the lower surface of the semiconductor substrate using the patterns as an etch barrier. Then, a thermal oxide layer is formed on the trench surface and the plasma pretreatment process is performed. Forming a first O 3 -TEOS-oxide film on the entire surface, and polishing the nitride film until the nitride film is exposed by a CMP process, and then removing the nitride film by a wet process, the first O 3 -TEOS-oxide film and the pad oxide film After exposing the to form a second O 3 -TEOS-oxide film on the entire surface, and a step of forming a trench plug through the sacrificial oxidation and gate cleaning process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100842904-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100446286-B1 |
| priorityDate | 1997-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 15.