http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100842904-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2005-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100842904-B1 |
| titleOfInvention | Device Separating Method of Semiconductor Device |
| abstract | The present invention discloses a method for forming a device isolation film of a semiconductor device. The disclosed method includes forming a hard mask film on a semiconductor substrate, sequentially etching the hard mask film and the semiconductor substrate to form a trench, forming a sidewall oxide film on the trench surface, Performing a high density plasma process for generating a plasma with a gas selected from the group consisting of He, O2, NF3, Ar, and N2 to the semiconductor substrate on which the sidewall oxide film is formed; and the sidewall on which the high density plasma process is performed Forming an O3-TEOS film to fill the trench including an oxide film; CMP the O3-TEOS film until the hard mask film is exposed; and removing the hard mask film. |
| priorityDate | 2005-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.