http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990003408-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate | 1997-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1999-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19990003408-A |
| titleOfInvention | Dry etching method of semiconductor device and apparatus for manufacturing same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching method of a semiconductor device for maintaining a line width during plasma etching of a fine pattern, and a manufacturing apparatus thereof. Forming a plasma in the etching chamber by applying an RF source power to an electrode in the etching chamber, and forming a plasma in the etching chamber. Applying an RF bias power to another supporting electrode, periodically turning the RF source power and the RF bias power on / off, and causing the RF source power and the RF bias power to have a predetermined phase difference . At this time, a portion of the photoresist pattern on both sides of the etched portion remains unetched, and a polymer is formed on the unetched photoresist pattern to maintain the line width of the etched portion. Such a method for manufacturing a semiconductor device and a manufacturing apparatus thereof enable the RF source / bias powder to be turned on and off, and the phase difference can be adjusted to maintain the line width of the contact hole, and the polymer formed in the photoresist film during the etching process. By adjusting the amount, the line width of the contact hole can be reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100735745-B1 |
| priorityDate | 1997-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 |
Total number of triples: 16.