| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3127 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1998-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1998-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-19980087292-A |
| titleOfInvention |
Semiconductor device manufacturing method |
| abstract |
It is the present manufacturing method to manufacture a semiconductor device including an interlayer insulating film corresponding to an oxide film formed on a semiconductor substrate or a film made of BPSG. Here, the aluminum wiring layer formed on the interlayer insulating film is selectively etched using an etching gas. At this time, the surface of the interlayer insulating film exposed by selective etching is reformed. Thereafter, a fluorinated amorphous carbon layer is formed by a CVD method or the like. According to one method of reforming, after the selective etching of the aluminum wiring layer, the etching gas is replaced with a gas containing CF 4 so that a plasma process is performed on the surface of the interlayer insulating film. According to another method of reforming, ion implantation of silicon is performed on the surface of the interlayer insulating film before the formation of the fluorinated amorphous carbon. By the above reforming, it is possible to maintain adhesion between the fluorinated amorphous carbon and the interlayer insulating film. |
| priorityDate |
1997-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |