http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980069989-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1997-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980069989-A |
| titleOfInvention | Semiconductor MOS field-effect transistor device and its manufacturing method |
| abstract | The present invention relates to a semiconductor MOSFET device formed on a silicon substrate comprising a trench that is filled with a shallow trench isolation dielectric trench structure and extends over the surface of the substrate. The trench structure has protruding sidewalls having channel regions in the substrate adjacent to and having corner regions. The channel regions are located between and adjacent the STI trench structures and the central portion of the channel region is doped with a dopant of a predetermined concentration that is higher than the dopant concentration of the corner region. This difference in dopant concentration actually provides the same electron concentration at the center and corner regions of the channel region. |
| priorityDate | 1997-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.