http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19980064588-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1997-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-19980064588-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | Provided are a semiconductor device having a WNF film having good covering property and embedding property in a fine hole, and a method of manufacturing the same.n n n The first conductive portion 46 constituting the source / drain diffusion layer of the MOS transistor formed on the main surface side of the semiconductor substrate 41 and the hole portion formed on the main surface side of the semiconductor substrate 41 and reaching the first conductive portion 46 ( Of the second conductive portions 48 and 49 and the second conductive portions 48 and 49 formed in the insulating film 47 having the 47a formed therein, the lower portion of which is formed in the hole portion 47a and connected to the first conductive portion 46. In a semiconductor device having a third conductive portion 50 connected to an upper portion to form wiring, at least a portion of the second conductive portions 48 and 49 are formed using a tungsten nitride film containing fluorine of 1% or more in atomic density. It is becoming. |
| priorityDate | 1996-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.