| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3494
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate |
1997-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-19980063630-A |
| titleOfInvention |
Modified Physical Vapor Deposition Chamber and Method for Depositing Materials at Low Pressure |
| abstract |
Conventional sputtering chambers are modified by target extensions surrounding the plasma region and confining electrons to the plasma. By confining electrons to the plasma in this manner, the pressure required to maintain the plasma is reduced. At low pressure the scattering of sputtered species is reduced and the sputtered particles reach the substrate perpendicularly, improving the filling of openings with high aspect ratios. |
| priorityDate |
1996-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |