abstract |
An object of the present invention is to provide a resist underlayer film capable of improving LWR or CDU in a fine pattern formed of a chemically amplified resist using an acid as a catalyst. The composition for forming a silicon-containing resist underlayer film contains a thermosetting silicon-containing material (Sx), a curing catalyst (Xc) and a solvent, and from a resist underlayer film formed by the composition for forming a silicon-containing resist underlayer film, the resist underlayer film The diffusion distance of the curing catalyst (Xc) into the resist overlayer film formed thereon is 5 nm or less. |