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filingDate 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102460463-B1
titleOfInvention Image Tone Reversal by Dielectric Using Bottom-Up Crosslinking for Back End of Line (BEOL) Interconnects
abstract Image tone inversion by dielectrics using bottom-up crosslinking for back end of line (BEOL) interconnects is described. In an example, a semiconductor structure including a metallization layer includes a plurality of trenches in an interlayer dielectric (ILD) layer over a substrate. The procatalyst layer is on sidewalls of one or more (but not all) of the plurality of trenches. Cross-linked portions of the dielectric material proximate the procatalyst layer in at least one of the plurality of trenches. Conductive structures are in the rest of the trenches.
priorityDate 2015-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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