| abstract |
The present invention suppresses damage to a film formed on a substrate for manufacturing a semiconductor device. Before performing plasma treatment to form the via hole 201 and the trench 202 with respect to the low dielectric constant film 20, which is a porous SiCHO film as an interlayer insulating film, in the hole 21 of the low dielectric constant film 20 in advance. A protective layer is formed by embedding polyurea. Further, on the protective layer (low-dielectric constant film 20 ), a sealing film 60 is formed in order to improve the heat resistance of the protective layer during a high-temperature process in the middle. When the low-dielectric-constant film 20 is subjected to a plasma treatment, damage to the low-k film 20 can be suppressed by the presence of the protective layer. The protective layer is then removed by depolymerization, for example at 250°C. As another application example of the protective layer, an example in which the protective layer is used in order to prevent damage due to overetching at the time of forming an electrode of a memory element is exemplified. |