| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102458309-B1 |
| titleOfInvention |
Method of forming a SiOCN material layer and method of fabricating a semiconductor device |
| abstract |
The present invention relates to a method for forming a SiOCN material film and a method for manufacturing a semiconductor device, comprising: supplying a silicon source on a substrate; supplying a carbon source on the substrate; supplying an oxygen source on the substrate; and supplying a nitrogen source on the substrate, wherein the silicon source is a non-halogen-based silylamine, a silane-based compound, or a mixture thereof. When the method for manufacturing the SiOCN material film and the method for manufacturing a semiconductor device of the present invention is used, there is an effect that a SiOCN material film and semiconductor device having few defects and high reliability can be manufactured. |
| priorityDate |
2015-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |