http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102436638-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2016-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102436638-B1 |
| titleOfInvention | Method for improving roughness and improving selectivity during ARC layer etching |
| abstract | A method of patterning a silicon-containing anti-reflective coating (ARC) layer underlying a patterned layer is described, comprising the steps of establishing a flow of process gas to a plasma processing system, the silicon-containing ARC layer relative to the patterned layer. selecting process conditions that increase the etch selectivity of exposing the substrate to the plasma to |
| priorityDate | 2015-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.