| abstract |
In an embodiment that provides a technique for performing selective pattern film formation while suppressing the complexity of the process, a method MT for processing a wafer W is provided, wherein the wafer W includes a metal portion 61; Including the insulating part 62 and the main surface 6, on the side of the main surface 6, the surface 61a of the metal part 61 and the surface 62a of the insulating part 62 are exposed, the method ( MT) includes a step S1 of accommodating the wafer W in the processing chamber 4 of the plasma processing apparatus 10 , a step S2 of starting supply of an O 2 gas into the processing chamber 4 , and generation of a SiF 4 gas and plasma a step S3 of supplying high-frequency power for use into the processing chamber 4 to generate plasma by the gas in the processing chamber 4 containing SiF 4 gas in the processing chamber 4 , wherein the plasma generated in the step S3 is deposited It contains species and etching species, and in the plasma generated in step S3, the proportion of the etching species is greater than the proportion of the deposition species. |