Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67745 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
filingDate |
2015-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2022-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-102422761-B1 |
titleOfInvention |
Deposition apparatus of capacitor and deposition method of dielectric layer using the same |
abstract |
The embodiment of the present invention can prevent the surface of the dielectric film from being deteriorated due to a vacuum break, and can prevent the quality of the dielectric film from being lowered due to physical stress generated when the semiconductor substrate is unloaded and loaded. It relates to a method of manufacturing a high-permittivity capacitor. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190087486-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190087485-A |
priorityDate |
2015-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |