| abstract |
One of the problems is to simplify the photolithography process by reducing the number of exposure masks, and to produce a semiconductor device including an oxide semiconductor at low cost and with high productivity. In a method for manufacturing a semiconductor device having an inverse staggered thin film transistor having a channel etch structure, an oxide semiconductor film and a conductive film are etched using a mask layer formed by a multi-gradation mask which is an exposure mask in which transmitted light has a plurality of intensities. do the process The etching process uses dry etching with an etching gas. [Index] Oxide semiconductor, channel etching, multi-gradation mask, dry etching, bottom gate |