| abstract |
The present invention provides a technique capable of uniformly processing a substrate. A reaction tube for processing a plurality of substrates, a substrate support portion for stacking and supporting a plurality of substrates in multiple stages, and at least from a height position of a lower substrate supported by the substrate support portion to a height position of an upper substrate, and further reacting A buffer chamber provided along the inner wall of the tube, and inserted through the side of the reaction tube from the lower part of the buffer chamber to the upper part, and high-frequency power is applied by a power supply, thereby generating plasma that activates the processing gas by plasma inside the buffer chamber A technique having an electrode for use is provided. |