| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2020-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102370578-B1 |
| titleOfInvention |
Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and program |
| abstract |
Increase selectivity in selective growth. (a) supplying an aminosilane-based gas to a substrate in which the first substrate and the second substrate are exposed on the surface, thereby adsorbing silicon contained in the aminosilane-based gas to the surface of one of the first substrate and the second substrate A step of, (b) supplying a fluorine-containing gas to the substrate after adsorbing silicon on the surface of the one substrate, thereby reacting the silicon adsorbed on the surface of the one substrate with the fluorine-containing gas to modify the surface of the one substrate and (c) supplying a film forming gas to the substrate after the surface of one of the underlying substrates has been modified to form a film on the surface of the other substrate different from one of the first substrate and the second substrate. |
| priorityDate |
2019-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |