http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102365799-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2301-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2203-326 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J133-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J133-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-385 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67132 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-25 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J133-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate | 2017-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102365799-B1 |
| titleOfInvention | Adhesive tape for semiconductor processing, and method for manufacturing a semiconductor device |
| abstract | The adhesive tape for semiconductor processing of the present invention is a step of grinding the back surface of a semiconductor wafer in which a groove is formed on the surface of a semiconductor wafer or a modified region is formed, and then dividing the semiconductor wafer into semiconductor chips by grinding the semiconductor wafer. An adhesive tape for semiconductor processing used by being pasted on the surface of a substrate, a buffer layer formed on one surface of the substrate, and an adhesive layer formed on the other surface of the substrate, the tape gun of the adhesive tape for semiconductor processing The thickness is 160 µm or less, the ratio (D2/D1) of the thickness (D2) of the buffer layer to the thickness (D1) of the substrate is 0.7 or less, and the peeling force to the semiconductor wafer is 1000 mN/50 mm or less am. |
| priorityDate | 2016-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 100.