| abstract |
In one aspect, the present invention immobilizes both the silicon- and hafnium-containing fragments on a given surface bearing hydroxyl groups, suitable as a ferroelectric material from 0.5 to 8 mol%, preferably from 2 to 6 mol%, most preferably from A formulation comprising both an organoaminohafnium and an organoaminosilane precursor which makes it possible to deposit silicon doped hafnium oxide having a silicon doping level in the range of 3 to 5 mole %. In another aspect, the present invention is a method and system for depositing a silicon doped hafnium oxide film using the formulation. |