http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102328850-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2021-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102328850-B1 |
| titleOfInvention | Sub-saturated atomic layer deposition and conformal film deposition |
| abstract | Methods and apparatus for depositing successive thin films using plasma-activated sub-saturated atomic layer deposition are described herein. According to various embodiments, pin-hole-free continuous films may be deposited to a thinner thickness than achievable using conventional methods. The methods and apparatus also provide a high degree of thickness control, and in some embodiments, the thickness per cycle of the films is tunable as low as 0.1 Angstroms. Additionally, the methods and apparatus may, in some embodiments, be used to provide films with improved properties, such as a lower wet etch rate. |
| priorityDate | 2012-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 127.