http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102298114-B1

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filingDate 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102298114-B1
titleOfInvention Polishing pad, preparation method thereof, and preparation method of semiconductor device using same
abstract The polishing pad according to the embodiment can be prepared by adjusting the content of elements present in the polishing layer, particularly nitrogen (N) element, and the total content of nitrogen (N), carbon (C), oxygen (O) and hydrogen (H) elements. , it is possible to significantly improve the physical properties and polishing rate, including hardness, tensile strength, elongation and modulus of the polishing pad. Therefore, it is possible to efficiently manufacture a high-quality semiconductor device using the polishing pad.
priorityDate 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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