http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102298114-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24D11-001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C263-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C263-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24D11-00 |
filingDate | 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2021-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-102298114-B1 |
titleOfInvention | Polishing pad, preparation method thereof, and preparation method of semiconductor device using same |
abstract | The polishing pad according to the embodiment can be prepared by adjusting the content of elements present in the polishing layer, particularly nitrogen (N) element, and the total content of nitrogen (N), carbon (C), oxygen (O) and hydrogen (H) elements. , it is possible to significantly improve the physical properties and polishing rate, including hardness, tensile strength, elongation and modulus of the polishing pad. Therefore, it is possible to efficiently manufacture a high-quality semiconductor device using the polishing pad. |
priorityDate | 2019-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.