| abstract |
By irradiating SF 6 gas plasma from the surface S side, the semiconductor wafer 1 exposed at the street portion is etched, divided into individual semiconductor chips, and divided into individual pieces. Next, the removal agent 16 is supplied from the surface S side. At this time, it is preferable to rotate the semiconductor wafer 1 divided into chips at high speed. As described above, the mask material layer 3b remaining on the surface S is removed with the removal agent 16 . Moreover, as the removal agent 16, it is preferable that it is an organic solvent, and it is especially preferable that it is methyl ethyl ketone, ethanol, ethyl acetate, or these combinations. |