| abstract |
The embodiment relates to a polishing pad used in a chemical mechanical planarization (CMP) process of a semiconductor, a method for manufacturing the same, and a method for manufacturing a semiconductor device using the same, wherein the polishing pad according to the embodiment has a number average of a plurality of pores By adjusting the diameter (Da) and the median diameter (Dm), it is possible to achieve an Ed value (Equation 1) in a specific range, and as a result, an excellent polishing rate and flatness can be realized. |