| abstract |
A method of forming a semiconductor device includes forming a plurality of metal pads over a semiconductor substrate of a wafer, forming a passivation layer covering the plurality of metal pads, and patterning the passivation layer to expose the plurality of metal pads. forming a first polymer layer over the passivation layer; forming a plurality of redistribution lines extending to the first polymer layer and the passivation layer to connect to the plurality of metal pads; forming a second polymer layer over the first polymer layer; and patterning the second polymer layer to reveal the plurality of redistribution lines. The first polymer layer is also exposed through the opening of the remainder of the second polymer layer. |