| abstract |
The method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an atomic layer deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer. |