| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102276907-B1 |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, and program |
| abstract |
The film quality of the film formed on the substrate is improved. (a) a cycle in which a process of supplying a boron-containing pseudo-catalyst gas to the substrate and a process of supplying a first source gas containing at least one of a Si-C bond and a Si-N bond to the substrate are performed non-simultaneously; a step of forming a first film containing at least one of Si-C bonding and Si-N bonding and boron on the substrate by performing the number of times, and (b) supplying a gas containing hydrogen and oxygen to the substrate. , a step of dissipating moisture absorption sites in the first film by reacting with a gas containing hydrogen and oxygen to reform the first film into a second film; and (c) performing thermal annealing treatment on the second film to obtain a second A step of desorbing moisture from the film to reform the second film into a third film is performed. |
| priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |