| abstract |
In a method of manufacturing a semiconductor device, a first conductive pattern structure that partially protrudes on a first interlayer insulating layer formed on a first substrate is formed on the first interlayer insulating layer. A first bonding insulating layer pattern surrounding the protruding portion of the first conductive pattern structure is formed on the first interlayer insulating layer. A first recess is formed in the first bonding insulating layer pattern. A first adhesive pattern including a polymer is formed filling the first recess. A second conductive pattern structure, which partially protrudes on the second interlayer insulating layer formed on the second substrate, is formed on the second interlayer insulating layer. A second bonding insulating layer pattern surrounding the protruding portion of the second conductive pattern structure is formed on the second interlayer insulating layer. A second recess is formed in the second bonding insulating layer pattern. A second adhesive pattern including a polymer is formed filling the second recess. Then, in a state where heat is applied to the first and second adhesive patterns to melt them, the first and second substrates are bonded to each other so that the first and second conductive pattern structures are in contact with each other. |