| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32577 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2017-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102241900-B1 |
| titleOfInvention |
Method for plasma etching a workpiece |
| abstract |
According to the present invention there is provided a method of plasma etching one or more elements in a silicon substrate, the method comprising Performing main etching using a cyclic etching process in which the deposition step and the etching step are alternately repeated; And Performing over-etching to complete plasma etching of the element, The over-etching includes at least one first type of etching step and at least one second type of etching step, each of the first and second type of etching steps includes etching by ion bombardment of the silicon substrate, ; The method, wherein the ion bombardment during the at least one second type of etching step has an inward slope with respect to the ion bombardment during the at least one first type of etching step. |
| priorityDate |
2016-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |