| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-06181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81191
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05571
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1191
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06565 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102222485-B1 |
| titleOfInvention |
Semiconductor device having through via, semiconductor package including the same and the method for manufacturing semiconductor device |
| abstract |
A semiconductor device having a through electrode includes: a substrate including a first surface and a second surface; A through electrode penetrating from the first surface to the second surface of the substrate and having a protrusion protruding from the second surface of the substrate; A front bump electrically connected to the through electrode and formed on the first surface of the substrate; A first passivation pattern disposed on the first surface of the substrate and including a first protrusion protruding by a predetermined height from an upper surface of the front bump; And a second passivation pattern formed by covering a part of the sidewall of the protrusion of the through electrode and protruding in the direction of the protrusion. |
| priorityDate |
2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |