http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102195139-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2014-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102195139-B1
titleOfInvention Methods of manufacturing semiconductor devices
abstract In a method of manufacturing a semiconductor device, a substrate is loaded into a deposition chamber. A preliminary precursor film is formed by supplying a preliminary precursor flow on the substrate. A precursor flow and a first oxidant flow are supplied on the preliminary precursor film to alternately and repeatedly form a precursor layer and a first oxidant layer. A second oxidant layer is formed by supplying a second oxidant flow on the precursor layer or the first oxidant layer. By forming a preliminary precursor film in advance, it is possible to prevent damage to the object.
priorityDate 2014-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008026162-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111545-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002197864-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6101811
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID129862430
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415207654
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6101810
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14767304
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415776239
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458392451
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID410565086
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID21902242
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14009063
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458393652
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID783
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID12145127
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID431978888
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451241001
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82895
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451471871
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448617527
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425193155
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426694112
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6098404
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452303365

Total number of triples: 51.