http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102172356-B1

Outgoing Links

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filingDate 2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-102172356-B1
titleOfInvention Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
abstract There is provided a gallium nitride self-standing substrate made of a plate composed of a plurality of gallium nitride-based single crystal particles having a single crystal structure in an approximately normal direction. The gallium nitride self-standing substrate includes a step of preparing a poly-orientation crystal sintered body, a step of forming a seed crystal layer made of gallium nitride on the poly-orientation crystal sintered body so as to have a crystal orientation substantially following the crystal orientation of the polyoriented crystal sintered body, and A step of forming a layer consisting of a gallium nitride-based crystal having a thickness of 20 μm or more on the crystal layer to have a crystal orientation generally following the crystal orientation of the seed crystal layer, and removing the oriented polycrystalline sintered body to obtain a gallium nitride self-supporting substrate It can be manufactured by a method including a process. According to the present invention, it is possible to provide a gallium nitride self-standing substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and suitable for a large area.
priorityDate 2014-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 42.