| abstract |
An object of the present invention is to form an orientation flat by suppressing the occurrence of cracking by an easy production method while ensuring a thickness and area that can be used for mass production. By removing a hard three-dimensional structure 14 having facets 15 from a gallium nitride crystal body 27 in parallel with a tangential line or the like, a gallium nitride substrate in which generation of chips and cracks is suppressed can be provided. Moreover, since the lines of the hard three-dimensional structure 14 having the facets 15 have a specific crystal orientation and are clear, the gallium nitride crystal cut and processed parallel to the lines of the three-dimensional structure 14 27 cutting lines 21 can be used for an orientation flat serving as a reference line for device processing. [Selection] Figure 1 |