| abstract |
It is an object to perform etching while adjusting the shape of the opening of the mask film. A method of generating plasma from a gas containing a hydrogen-containing gas and a fluorine-containing gas by high-frequency power for plasma generation, and etching the silicon oxide film by the generated plasma, wherein the fluorine-containing gas is a hydrofluorocarbon gas. Including, the radical generated from the hydrofluorocarbon gas is provided with an etching method having a larger adhesion coefficient than the radical generated from the carbon tetrafluoride (CF 4 ). |