| abstract |
One of the problems is to simplify the photolithography process by reducing the number of exposure masks, and to produce a semiconductor device having an oxide semiconductor with high productivity at low cost. A method of manufacturing a semiconductor device having a channel etch structure inverted staggered thin film transistor, wherein the oxide semiconductor film and the conductive film are etched using a mask layer formed by a multi-gradation mask that is an exposure mask in which transmitted light has a plurality of intensities. Process is performed. The etching process uses dry etching with an etching gas. [Index] Oxide semiconductor, channel etching, multi-gradation mask, dry etching, bottom gate |