| abstract |
Described herein are methods of forming precursor and silicon-containing films. In one aspect, provided herein is a precursor of formula (I): (I) Where R 1 is a linear or branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group , C 6 to C 10 aryl group; R 2 is hydrogen, linear or branched C 1 to C 10 alkyl group, linear or branched C 3 to C 6 alkenyl group, linear or branched C 3 to C 6 alkynyl group, C 1 to C 6 dialkylamino group, C 6 to C 10 aryl groups, linear or branched C 1 to C 6 fluorinated alkyl groups, electron withdrawing groups, and C 4 to C 10 aryl groups; Optionally, R 1 and R 2 are joined together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; n = 1 or 2. |